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| STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247 FDmeshTM Power MOSFET (with fast diode) General features Type STF20NM60D STP20NM60FD STW20NM60FD VDSS 600V 600V 600V RDS(on) <0.29 <0.29 <0.29 ID 20A 20A 20A Pw 192W 45W 214W TO-247 3 1 2 TO-220FP High dv/dt and avalanche capabilities 100% Avalanche tested Low input capacitance and gate charge 1 3 2 Low gate input resistancE Tight process control and high manufacturing yields TO-220 Internal schematic diagram Description The FDmeshTM associates all advantages of www..com reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications Switching application Order codes Part number STF20NM60D STP20NM60FD STW20NM60FD Marking F20NM60D P20NM60FD W20NM60FD Package TO-220FP TO-220 TO-247 Packaging Tube Tube Tube August 2006 Rev 4 1/15 www.st.com 15 Contents STF20NM60D - STP20NM60FD - STW20NM60FD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit ................................................ 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STF20NM60D - STP20NM60FD - STW20NM60FD Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VDGR VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220 Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 k) Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 20 12.6 80 192 1.20 TO-220FP 600 600 30 20 (1) (1) Unit TO-247 V V V 20 12.6 80 214 1.42 A A A W W/C V/ns V C C 12.6 80 (1) PTOT (3) 45 0.36 20 dv/dt Peak diode recovery voltage slope Insulation withstand voltage (DC) Operating junction temperature Storage temperature - VISO Tj Tstg 2500 - 65 to 150 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD < 20A, di/dt < 400A/s, VDD = 80%V(BR)DSS Table 2. Symbol Thermal resistance Value Parameter TO-220 TO-220FP 2.8 62.5 300 TO-247 0.585 30 C/W C/W C 0.65 Unit Rthj-case Thermal resistance junction-case Max Rthj-amb Thermal resistance junction-ambient Max Tl Maximum lead temperature for soldering purpose Table 3. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAR, VDD = 35 V) Value 10 700 Unit A mJ 3/15 Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS = 0 VDS = Max rating VDS = Max rating, TC = 125 C VGS = 30V VDS = VGS, ID = 250A VGS = 10V, ID = 10A 3 4 Min 600 1 10 10 0 5 Typ Max Unit V A A A V 0.26 0.29 Table 5. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS > ID(on) x RDS(on)max, ID = 10A VDS = 25V, f = 1 MHz, VGS = 0 Min Typ Max Unit 9 1300 500 35 190 2.7 37 10 17 S pF pF pF pF nC nC nC Coss eq. (2) Equivalent output capacitance VGS = 0V, VDS = 0V to 480V RG Qg Qgs Qgd Gate input resistance Total gate charge Gate-source charge Gate-drain charge f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain VDD = 480V, ID = 20A, VGS = 10V (see Figure 17) 52 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% 4/15 STF20NM60D - STP20NM60FD - STW20NM60FD Table 6. Symbol td(on) tr tr(Voff) tf tc Electrical characteristics Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Cross-over time Test conditions VDD = 300V, ID = 10A RG = 4.7 VGS = 10V (see Figure 16) VDD = 480 V, ID = 20A, RG = 4.7, VGS = 10V (see Figure 16) Min. Typ. 25 12 8 22 30 Max. Unit ns ns ns ns ns Table 7. Symbol ISD ISDM (1) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, VGS = 0 ISD = 20 A, Tj = 25C di/dt =100A/s,VDD=60V (see Figure 21) ISD = 20 A, Tj = 150C di/dt =100A/s,VDD=60V (see Figure 21) 240 1800 16 396 2960 20 Test conditions Min Typ. Max 20 80 1.5 Unit A A V ns nC A ns nC A VSD (2) trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 5/15 Electrical characteristics STF20NM60D - STP20NM60FD - STW20NM60FD 2.1 Figure 1. Electrical characteristics (curves) Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220 Figure 3. Safe operating areafor TO-220FP Figure 4. Thermal impedance for TO-220FP Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247 6/15 STF20NM60D - STP20NM60FD - STW20NM60FD Figure 7. Output characterisics Figure 8. Electrical characteristics Transfer characteristics Figure 9. Transconductance Figure 10. Static drain-source on resistance Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations 7/15 Electrical characteristics Figure 13. Normalized gate threshold voltage vs temperature STF20NM60D - STP20NM60FD - STW20NM60FD Figure 14. Normalized on resistance vs temperature Figure 15. Source-drain diode forward characteristics 8/15 STF20NM60D - STP20NM60FD - STW20NM60FD Test circuit 3 Test circuit Figure 17. Gate charge test circuit Figure 16. Switching times test circuit for resistive load Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test switching and diode recovery times circuit Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform 9/15 Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 10/15 STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 11/15 Package mechanical data STF20NM60D - STP20NM60FD - STW20NM60FD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/15 STF20NM60D - STP20NM60FD - STW20NM60FD Package mechanical data TO-220FP MECHANICAL DATA mm. MIN. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 28.6 9.8 2.9 15.9 9 3 30.6 10.6 3.6 16.4 9.3 3.2 1.126 .0385 0.114 0.626 0.354 0.118 TYP MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.017 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 DIM. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 O A B L3 L6 L7 F1 F D G1 H F2 L2 L5 E 123 L4 G 13/15 Revision history STF20NM60D - STP20NM60FD - STW20NM60FD 5 Revision history Table 8. Date 09-Sep-2004 21-Apr-2006 25-Jul-2006 01-Aug-2006 Revision history Revision 1 2 3 4 First release New template Modified part number Corrected unit on Table 5.: Dynamic Changes 14/15 STF20NM60D - STP20NM60FD - STW20NM60FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. 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